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8027條結果 1/20

  • 題名 作者 來源 發表時間 操作
  • 【24hr】 Fully Vertical GaN-on-Si power MOSFETs 包量

    機器翻譯完全垂直的GaN-on-si功率mOsFET

    作者:Khadar, Riyaz AbdulLiu, ChaoSoleimanzadeh, RezaMatioli, Elison 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:We report the first demonstration of fully vertical power MOSFETs on 6.6-mu m-thick GaN, grown on a 6-inch Si substrate by metal-organic chemical vapor deposition. A robust fabrication method was developed based on a selective and local removal of the Si substrate as well as the resistive GaN buffer layers, followed by a conformal deposition of a 35-mu m-thick copper layer on the backside by electroplating, which provides excellent mechanical stability and electrical contact to the drain terminal. The fabrication process of the gate trench was optimized, improving considerably the effective mobility at the p-GaN channel and the output current of the devices. High-performance fully vertical GaN-on-Si MOSFETs are presented, with a low specific ON-resistance (Ron, sp) of 5 m Omega.cm(2) and a high OFF-state breakdown voltage of 520 V. Our results reveal a major step toward the realization of high-performance GaN vertical power devices on cost-effective Si substrates.

    【關鍵字】:GaNverticalpower devicesGaN-on-Sihigh breakdownfully-verticalMOSFETslow R-on,R-sp

    機器翻譯 GaN;垂直;功率器件; GaN-on-si;高擊穿;全垂直; mOsFET;低R-on,R-sp;

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • Fully Vertical GaN-on-Si power MOSFETs

    Khadar, Riyaz AbdulLiu, ChaoSoleimanzadeh, RezaMatioli, Elison

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 Simulation-Based Study of Si/Si0.9Ge0.1/Si Hetero-Channel FinFET for Enhanced Performance in Low-Power Applications 包量

    機器翻譯基于仿真的si / si 0.9 Ge 0.1 / si異質溝道FinFET研究,在低功耗應用中提高性能

    作者:Ding, FeiWu, Yi-TingConnelly, DanielZhang, WenyiLiu, Tsu-Jae King 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:The performance of a p-channel FinFET comprising a heterogeneous silicon (Si) and silicon-germanium (Si0.9Ge0.1) channel region is evaluated using three-dimensional TCAD simulations and benchmarked against a conventional p-channel Si FinFET. The results show that the hetero-channel design provides for larger ON-state current while maintaining comparable electrostatic integrity as the conventionaldesign due to the valence band offset between Si0.9Ge0.1 and Si. The enhanced performance is achieved with a relatively low Ge mole fraction (10%) in the channel region for ease of manufacture. Therefore, the hetero-channel FinFET is promising for future low-power applications.

    【關鍵字】:FinFETSiGehetero-channel

    機器翻譯 鰭式場效應晶體管;鍺;雜溝道;

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • Simulation-Based Study of Si/Si0.9Ge0.1/Si Hetero-Channel FinFET for Enhanced Performance in Low-Power Applications

    Ding, FeiWu, Yi-TingConnelly, DanielZhang, WenyiLiu, Tsu-Jae King

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 High-Mobility Ge pMOSFETs With Crystalline ZrO2 Dielectric 包量

    機器翻譯具有結晶ZrO 2 介電的高遷移率Ge pmOsFET

    作者:Liu, HuanHan, GenquanXu, YangLiu, YanLiu, Tsu-Jae KingHao, Yue 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:High-mobility Ge pMOSFETs with crystalline ZrO2 gate dielectric are realized and compared against devices with O-3/ZrO2, amorphous ZrO2, and Al2O3/ZrO2 gate dielectrics. The crystallization of ZrO2 provides for significantly improved effective hole mobility (mu(eff)) and reduced capacitance equivalent thickness (CET), boosting the transistor drive current. An interfacial Al2O3 passivation layer enhances mu(eff) but increases the CET. Passivation-free Ge pMOSFETs with 2.5-nm crystalline ZrO2 gate dielectric achieve a higher mu(eff) than previously reported unstrained Ge pMOSFETs with the CET below 1 nm, at a high inversion-layer charge density.

    【關鍵字】:GermaniumMOSFETZrO2crystallinemobility

    機器翻譯 鍺; mOsFET;氧化鋯;結晶;流動性;

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • High-Mobility Ge pMOSFETs With Crystalline ZrO2 Dielectric

    Liu, HuanHan, GenquanXu, YangLiu, YanLiu, Tsu-Jae KingHao, Yue

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact 包量

    機器翻譯基于氧化錫肖特基接觸的高性能Ga 2 O 3 二極管

    作者:Du, LuluXin, QianXu, MingshengLiu, YaxuanMu, WenxiangYan, ShiqiWang, XinyuXin, GongmingJia, ZhitaiTao, Xu-TangSong, Aimin 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:A high-performance Schottky diode based on a 600-mu m-thick Cr-doped beta-Ga2O3 single crystal has been fabricated using SnOx as the Schottky contact. The SnOx film was deposited in argon/oxygen mixture gas to ensure an oxygen-rich stoichiometry in Ga2O3 near the Schottky interface, thus reducing oxygen deficiency-related interface state density. The SnOx film included three components: Sn, SnO, and SnO2, as revealed by X-ray photoelectron spectroscopy characterization. The high-qualityGa(2)O(3) single crystal grown by an edge-defined film-fed method has a carrier concentration of 1.0 x 1018 cm-3 and an electron mobility of similar to 90 cm(2)/Vs. The current density-voltage characteristics of the Schottky diode demonstrated high performance with a large barrier height of 1.19 eV, a close-to-unity ideality factor of 1.02, and a high rectification ratio beyond 1010. The frequency-dependent capacitance and conductance analysis revealed that the maximum active interface state density

    【關鍵字】:Ga2O3Schottky barrier diodes (SBDs)tin oxide (SnOx)

    機器翻譯 Ga2O3;肖特基勢壘二極管(sBDs);氧化錫(snOx);

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact

    Du, LuluXin, QianXu, MingshengLiu, YaxuanMu, WenxiangYan, ShiqiWang, XinyuXin, GongmingJia, ZhitaiTao, Xu-TangSong, Aimin

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors 包量

    機器翻譯p-GaN柵alGaN / GaN高電子遷移率晶體管的柵極可靠性

    作者:Ge, MeiRuzzarin, MariaChen, DunjunLu, HaiYu, XinxinZhou, JianjunDe Santi, CarloZhang, RongZheng, YoudouMeneghini, MatteoMeneghesso, GaudenzioZanoni, Enrico 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:The gate reliability of p-GaN gate AlGaN/GaN high electron mobility transistors with a ring-gate structure is investigatedby step-stressexperimentsunder a gate bias, combined with electroluminescence imaging and pulsed measurements. For gate stress (V-Gstress) from 0 to 13 V, the drain current is found to be stable and decreases at 13 V at OFF-state and increases at ON-state. For V-Gstress from 13 to 31 V, the drain current increases at OFF-state and decreases at ON-state, whereas V-TH is stable and increases slightly. The changes in drain current characteristic and V-TH values of the device after applying various V-Gstress are associatedwith the injection and trapping of holes from the p-GaN layer to the AlGaN layer, supported by the results of pulsed measurements and by the simulation of energy band diagrams. When V-Gstress is further increased to a high voltage of 31 V, V-TH becomes noisy and a strong luminescence signal occurs with a sudden reduction in the drain current, and finally, a catastrophic failure happens in the gate-channel region.

    【關鍵字】:AlGaN/GaNHEMTsreliability

    機器翻譯 的alGaN / GaN; HEmT器件;可靠性;

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors

    Ge, MeiRuzzarin, MariaChen, DunjunLu, HaiYu, XinxinZhou, JianjunDe Santi, CarloZhang, RongZheng, YoudouMeneghini, MatteoMeneghesso, GaudenzioZanoni, Enrico

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 Low-Voltage Oxide-Based Synaptic Transistors for Spiking Humidity Detection 包量

    機器翻譯用于尖峰濕度檢測的低壓氧化物基突觸晶體管

    作者:Nie, ShaHe, YongliLiu, RuiShi, YiWan, Qing 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:In order to obtain higher humidity sensitivity, shorter response/recover time, and lower energy consumption, we investigate the dynamic humidity sensing characteristics of indium-zinc-oxide (IZO)-based synaptic transistors with graphene oxide/chitosan composite electrolyte films as the gate dielectrics. Here, the short-term synaptic plasticity parameters, such as excitatory post-synaptic current, paired-pulse facilitation index, and high-pass filtering coefficient, were used for quantitative characterization of the relative humidity. The spiking humidity response time and energy consumption of such synaptic transistors are estimated to be 30 ms and 2.2 nJ, respectively. At the same time, a model based on the humidity-dependent proton gating and the adsorption of water molecules at the IZO channel surface is proposed.

    【關鍵字】:Synaptic transistorsspiking humidity sensorsshort-term plasticity

    機器翻譯 突觸晶體管;尖峰濕度傳感器;短期可塑性;

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • Low-Voltage Oxide-Based Synaptic Transistors for Spiking Humidity Detection

    Nie, ShaHe, YongliLiu, RuiShi, YiWan, Qing

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 Effects of Annealing on Ferroelectric Hafnium–Zirconium–Oxide-Based Transistor Technology 包量

    機器翻譯退火對鐵電鉿 - 氧化鋯基晶體管技術的影響

    作者:Chen, Yi-HsuanSu, Chun-JungHu, ChenmingWu, Tian-Li 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:In this letter, we investigate annealing effects in ferroelectric HfZrOx dielectric in metal-insulator-metal devices and metal-oxide-semiconductor capacitors by comparing two annealing methods: rapid thermal annealing (RTA) and microwave annealing (MWA). The tradeoff characteristics between the annealing conditions, polarization-electric field characteristics, gate leakage current, and interface state density (D-it) are discussed. We show that: 1) a positive correlation between the remanent polarization (Pr), the gate leakage current, and D-it as the annealing temperature (RTA) and the annealing power (MWA) increase and 2) the MWA is promising for ferroelectric transistors technology, since its low thermal budget can minimize D-it and avoid increase in the gate leakage current.

    【關鍵字】:Hafnium zirconium oxideferroelectricityannealing

    機器翻譯 鉿氧化鋯;鐵電性;退火;

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • Effects of Annealing on Ferroelectric Hafnium–Zirconium–Oxide-Based Transistor Technology

    Chen, Yi-HsuanSu, Chun-JungHu, ChenmingWu, Tian-Li

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 High-Voltage Regrown Nonpolar ${m}$ -Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches 包量

    機器翻譯高壓再生長非極性<內聯公式> $ {m} $ -plane Vertical pn Diodes:邁向未來選擇的一步 - 區域電源開關

    作者:Monavarian, M.Pickrell, G.Aragon, A. A.Stricklin, I.Crawford, M. H.Allerman, A. A.Celio, K. C.Leonard, F.Talin, A. A.Armstrong, A. M.Feezell, D. 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:We report high-voltage regrown nonpolar m-plane p-n diodes on freestandingGaN substrates. A high blocking voltage of 540 V at similar to 1 mA/cm(2) (corresponding to an electric field of E similar to 3.35 MV/cm), turn-ON voltages between 2.9 and 3.1 V, specific on-resistance of 1.7m Omega.cm(2) at 300 A/cm(2), and a minimum ideality factor of 1.7 were obtained for the regrown diodes. Our results suggest that Si, O, and C interfacial impurity levels up to 2 x 10(17) cm(-3), 8 x 10(17) cm(-3), and 1 x 10(19) cm(-3), respectively, at the metallurgical junction of m-plane, p-n diodes do not result in very early breakdown in the reverse bias although the off-state leakage current in the forward bias is affected. The impact of the growth interruption/regrowth on diode performance is also investigated.

    【關鍵字】:GaNnonpolarvertical p-n diodesselective-area dopingleakage currentsideality factorspecific on-resistanceimpurity incorporation

    機器翻譯 GaN;非極性;垂直p-n二極管;選擇性區域摻雜;漏電流;理想因子;特定導通電阻;雜質摻入;

  • High-Voltage Regrown Nonpolar ${m}$ -Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches

    Monavarian, M.Pickrell, G.Aragon, A. A.Stricklin, I.Crawford, M. H.Allerman, A. A.Celio, K. C.Leonard, F.Talin, A. A.Armstrong, A. M.Feezell, D.

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 Volatile Memory Characteristics of a Solution-Processed Tin Oxide Semiconductor 包量

    機器翻譯溶液處理氧化錫半導體的易失性存儲特性

    作者:Hsu, Chih-ChiehChuang, Po-YangLin, Yu-Sheng 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:In this letter, we demonstrate and study the volatile memory characteristics of the sol-gel SnOx semiconductor. The SnOx exhibits a significant self-rectifying behavior and high nonlinearity. Low reverse-biased currents and high forward-biased currents are observed in the positive and negative voltage regions, respectively. The rectifying ratio can reach 3.7 x 10(5), and the selection ratio ([email protected]/[email protected](read)) is 10(2). A pinched current hysteresis is found in the forward-biased region, which indicates the volatile memory characteristics of the SnOx memory. The resistance ratio between the high-resistance state and lowresistance state is similar to 10(5). In addition, the stability test reveals that the memory can repeatedly operate for over 1.5 x 10(3) cycles.

    【關鍵字】:Oxide semiconductorthin filmelectrical characteristicshysteresissolution process

    機器翻譯 氧化物半導體;薄膜;電學特性;滯后;溶液工藝;

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • Volatile Memory Characteristics of a Solution-Processed Tin Oxide Semiconductor

    Hsu, Chih-ChiehChuang, Po-YangLin, Yu-Sheng

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 Transparent Capacitive-Type Fingerprint Sensing Based on Zinc Oxide Thin-Film Transistors 包量

    機器翻譯基于氧化鋅薄膜晶體管的透明電容式指紋傳感

    作者:Jiang, AikeYuan, YonggangLiu, NiHan, LeixiaoXiong, MianSheng, YeweiYe, ZhiLiu, Yang 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:A highly transparent, capacitive-type fingerprint-sensing panel is demonstrated using an active sensor matrix based on zinc oxide (ZnO) thin-film transistors (TFTs). In particular, the ZnO TFTs are used in each pixel not only as select switches but also for pre-amplification of signals. Compared to the select switch scheme, the pre-amplifier scheme shows significantly enhanced signals. It produces clear 50x50 size and 254 dpi fingerprint images, from which the minutia features are extracted. Furthermore, the sensor panel exhibits stable operations under the illumination of white light. This letter may open up potential applications of on-display transparent electronics that involve active circuits.

    【關鍵字】:Zinc oxide thin-film-transistorfingerprint sensoractive matrixtransparent electronics

    機器翻譯 氧化鋅薄膜晶體管;指紋傳感器;有源矩陣;透明電子器件;

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • Transparent Capacitive-Type Fingerprint Sensing Based on Zinc Oxide Thin-Film Transistors

    Jiang, AikeYuan, YonggangLiu, NiHan, LeixiaoXiong, MianSheng, YeweiYe, ZhiLiu, Yang

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 Design and Mechanism of Embedding Specific Carbon Nanotubes in Sputtered Sandwiched InGaZnO Thin-Film Transistors 包量

    機器翻譯濺射夾層InGaZnO薄膜晶體管中嵌入特定碳納米管的設計與機理

    作者:Zhang, JiaonaZhang, MinDu, ChunhuiZhang, ShuoLiao, ZhiqiangRong, ZhaoZhang, Lining 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with high mobility are highly desirable to achieve high-speed operation in active-matrix displays and large-area sensors. Only a few works provide potential solutions. In this letter, we have embedded carbon nanotubes (CNTs) into sputtered a-IGZO film to form a-IGZO/CNT/a-IGZO (ACA) sandwiched channel. In the ACA channel, the CNT percolation networks connected by the a-IGZO film work as high-speed carrier paths to enable faster transport of carriers during the ON state, while it does not degrade the leakage performance during the OFF state. The type and the embedding location of the CNT percolation network are critical to determine the ACA device performance, which is analyzed and verified by experiment and simulation. The optimum ACA design has approximately doubled the mobility and the ON-current density of the TFT. The design owns relatively better uniformity and provides a high-speed TFT solution for the advanced electronics.

    【關鍵字】:Amorphous indium gallium zinc oxidethin film transistormobilitysandwiched structurecarbon nanotube

    機器翻譯 非晶銦鎵鋅氧化物;薄膜晶體管;遷移率;夾層結構;碳納米管;

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • Design and Mechanism of Embedding Specific Carbon Nanotubes in Sputtered Sandwiched InGaZnO Thin-Film Transistors

    Zhang, JiaonaZhang, MinDu, ChunhuiZhang, ShuoLiao, ZhiqiangRong, ZhaoZhang, Lining

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 Low-Temperature, High-Performance InGaZnO Thin-Film Transistors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering 包量

    機器翻譯電容耦合等離子體輔助磁控濺射制備低溫高性能InGaZnO薄膜晶體管

    作者:Liu, ChangSun, YingQin, HouyunLiu, YimingWei, SongZhao, Yi 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:This letter demonstrates a novel approach to fabricate the high-performance a-InGaZnO thin-film transistors via using the capacitive coupled plasma-assistant magnetron sputtering with low post annealing temperature (100 degrees C). The influence of radio frequency generated plasma power during the a-InGaZnO deposition has been intensively investigated. With the plasma-assistant magnetron sputtering at room temperature, the best thin-film transistor exhibits a high mobility of 26.03 cm(2)/Vs, a threshold voltage of 2 V, a subthreshold swing of 0.33 V/decade, and I-ON/I-OFF of more than 10(7). The proposed capacitive coupled plasma-assistant magnetron sputtering fabrication process in this letter could be a potential approach to be applied for the flexible electronic devices.

    【關鍵字】:Capacitive coupled plasma assistantmagnetron sputteringlow temperaturehigh performancea-IGZOthin film transistors

    機器翻譯 電容耦合等離子體輔助磁控濺射;低溫;高性能; a-IGZO;薄膜晶體管;

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • Low-Temperature, High-Performance InGaZnO Thin-Film Transistors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering

    Liu, ChangSun, YingQin, HouyunLiu, YimingWei, SongZhao, Yi

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 MoS2/Silicon-on-Insulator Heterojunction Field-Effect-Transistor for High-Performance Photodetection 包量

    機器翻譯用于高性能光電探測的mos 2 /絕緣體上硅異質結場效應晶體管

    作者:Deng, J.Guo, Z.Zhang, Y.Cao, X.Zhang, S.Sheng, Y.Xu, H.Bao, W.Wan, J. 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:In this letter, we demonstrate a novel junction field-effect transistor by transferring MoS2 onto a siliconon- insulator (SOI) substrate to control the thin Si channel. By combining high light absorption coefficient in MoS2 with high internal gain in thin Si channel, the device can be used for photodetection and can achieve high responsivity up to similar to 1.78 x 10(4) A/W, high detectivity over 3 x 10(13) Jones, and short response time down to 1.44 ms. Furthermore, unlike the conventional SOI photodetector, which is only sensitive to UV light, the response spectrum of our proposed device peaks in visible/near-infraredregion, which is interesting for imaging and optical communication applications.

    【關鍵字】:SOIMoS2Van der Waals heterojunctionjunction field effect transistorhigh photoresponsivity

    機器翻譯 sOI; mos 2;范德瓦爾斯異質結;結型場效應晶體管;高光響應性;

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • MoS2/Silicon-on-Insulator Heterojunction Field-Effect-Transistor for High-Performance Photodetection

    Deng, J.Guo, Z.Zhang, Y.Cao, X.Zhang, S.Sheng, Y.Xu, H.Bao, W.Wan, J.

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 Current Aperture Vertical $beta$ -Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping 包量

    機器翻譯當前孔徑垂直<內聯公式> $ beta $ -Ga 2 O 3 mOsFET

    作者:Wong, Man HoiGoto, KenMurakami, HisashiKumagai, YoshinaoHigashiwaki, Masataka 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:Depletion-mode vertical Ga2O3 metal-oxidesemiconductor field-effect transistors featuring a current aperture were developed on a halide vapor phase epitaxial drift layer grown on a bulk beta-Ga2O3 (001) substrate. Three ion implantation steps were employed to fabricate the n ++ source regions, lateral n channel, and p current blocking layers, where Si and N were selected as the donor and deep acceptor dopant species, respectively. The transistors delivered a drain current density of 0.42 kA/cm(2), a specific on-resistance of 31.5m Omega.cm(2), and an output current on/off ratio of over 108. High-voltage performance of the present devices was hampered by a large gate oxide field in the off-state causing high gate leakage, a limitation that can be readily overcome through optimized doping schemes and an improved gate dielectric. The demonstration of a planar-gate vertical Ga2O3 transistor based on a highly manufacturable all-ion-implanted process greatly enhances the prospects for Ga2O3-based power electronics.

    【關鍵字】:Ga2O3power MOSFETvertical transistorion implantationcurrent aperture

    機器翻譯 Ga2O3;功率mOsFET;垂直晶體管;離子注入;電流孔徑;

  • Current Aperture Vertical $beta$ -Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping

    Wong, Man HoiGoto, KenMurakami, HisashiKumagai, YoshinaoHigashiwaki, Masataka

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal 包量

    機器翻譯基于高性能納米線的E模式功率GaN mOsmEmT,具有大功函數柵極金屬

    作者:Nela, LucaZhu, MinghuaMa, JunMatioli, Elison 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:In this letter, we demonstrate high-performance enhancement-mode (E-mode) GaN metal-oxide-semiconductor high-electron-mobility transistors on a Si substrate based on sidewall depletion achieved by nanostructured gate with large work-function metal. The devices presented threshold voltage (V-TH) over 0.6 V at 1 mu A/mm, large current density (IDS) up to 590 mA/mm, low specific ON resistance (RON, SP) of 1.33m Omega.cm(2), high ON/OFF ratio over 1010, and large breakdown voltage (VBR) of 1080 V at 1 mu A/mm with a grounded substrate. The excellent highpower FOM of 877 MW/cm(2) reveals the potential of our approach to obtain the E-mode operation while maintaining exceptional ON-state performance and high VBR.

    【關鍵字】:GaNHEMTE-modesidewalls depletionPt gatework-function engineering

    機器翻譯 GaN; HEmT; E模;側壁耗盡; pt柵極;功函數工程;

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

    Nela, LucaZhu, MinghuaMa, JunMatioli, Elison

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 pH Sensor Based on LDMOS Transistor With Floating Gate and Ring Structure 包量

    機器翻譯基于LDmOs晶體管的浮柵和環結構pH傳感器

    作者:Jeong, Hyun-MinKim, Ju-SeongXu, BinruiKwon, Hyurk-ChoonKwon, Dae-HyukKang, Shin-Won 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:Lateral double-diffused metal-oxide semiconductors (LDMOSs) have applications in various devices. In this letter, the characteristics of a proposed sensor application based on an LDMOS incorporating a floating gate are reported. Furthermore, the possible applications of the proposed device are explored. In addition to being applicable to the unmodified complementary metal-oxide-semiconductor process, the layout of our device can be optimized for ion detection purposes. The sensitivity results across a pH range of 1-12 were approximately 9.01, 8.52, 8.73, and 7.81 nA/pH for the polysilicon lengths of 3.5, 4, 5, and 6 mu m, respectively. The linearities of the LDMOSs were approximately 0.941, 0.940, 0.949, and 0.950 for the same polysilicon lengths. The results show that the proposed device is pH-responsive and exhibits linearity throughout the pH detection experiment. This proves that the proposed device is suitable for application as an ion sensor.

    【關鍵字】:pH sensorring structurefloating gatelaterally double-diffused metal-oxide semiconductor (LDMOS)sensitivity

    機器翻譯 pH傳感器;環形結構;浮動柵極;橫向雙擴散金屬氧化物半導體(LDmOs);靈敏度;

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • pH Sensor Based on LDMOS Transistor With Floating Gate and Ring Structure

    Jeong, Hyun-MinKim, Ju-SeongXu, BinruiKwon, Hyurk-ChoonKwon, Dae-HyukKang, Shin-Won

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2 包量

    機器翻譯使用3 nm鐵電Hf 0.5 Zr 0.5 O 2 改善亞閾值擺幅和漏極電流的FinFET

    作者:Zhang, ZhaohaoXu, GaoboZhang, QingzhuHou, ZhaozhaoLi, JunjieKong, ZhenzhenZhang, YongkuiXiang, JinjuanXu, QiuxiaWu, ZhenhuaZhu, HuilongYin, HuaxiangWang, WenwuYe, Tianchun 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:High-performance negative capacitance p-type FinFETs (p-FinFETs) with a 3-nm-thick ferroelectric (FE) hafnium zirconium oxides (Hf0.5Zr0.5O2) layer are fabricated based on a conventional high-kappa metal gate FinFETs fabrication flow. The devices show improved subthreshold swing values [34.5 mV/dec for 500-nm gate length (L-G) and 53 mV/dec for 20-nm-L-G devices] and slight hysteresis voltages (similar to 9 mV for LG = 500 nm and similar to 40 mV for L-G = 20-nm transistors). With the integrated FE film, a strong driving current enhancement (up to 260%) is also obtained compared with that of conventional FinFETs. The inherent reasons for the improved characteristics contribute to the low-interface state density (D-it) and the perfect channel electrostatic integrity.

    【關鍵字】:FinFETferroelectric (FE)hafnium zirconium oxide (Hf0.5Zr0.5O2)negative capacitance (NC)subthreshold swing (SS)low power

    機器翻譯 FinFET;鐵電(FE);氧化鉿鋯(Hf0.5Zr0.5O2);負電容(NC);亞閾值擺幅(ss);低功率;

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2

    Zhang, ZhaohaoXu, GaoboZhang, QingzhuHou, ZhaozhaoLi, JunjieKong, ZhenzhenZhang, YongkuiXiang, JinjuanXu, QiuxiaWu, ZhenhuaZhu, HuilongYin, HuaxiangWang, WenwuYe, Tianchun

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability 包量

    機器翻譯具有高溫穩定性的外延生長GaN-on-GaN垂直<斜體> p - n 二極管的閾值切換和存儲行為

    作者:Fu, KaiFu, HouqiangHuang, XuanqiYang, Tsung-HanChen, HongBaranowski, IzakMontes, JossueYang, ChenZhou, JinganZhao, Yuji 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:This letter reports the observation of threshold switching and memory behaviors of epitaxially regrown GaN-on-GaN vertical p-n diodes. This mechanism was ascribed to the conductive path formed by traps in the insulating layer at the regrowth interface after soft breakdown. The device can reliably switch more than 1000 cycles at both room temperature and 300 degrees C with small fluctuation on the set and reset voltage. The set voltage increased with the increasing temperature due to the enhanced thermal detrapping effect that made it harder to form conductive path at high temperatures. Besides, the device showed memory behaviors when the reset voltage was higher than 4.4 V. This letter can serve as an important reference to further developing GaN-based memory devices and integrated circuits.

    【關鍵字】:Gallium nitridewide bandgap semiconductorp-n diodesbreakdownthreshold switchingmemory

    機器翻譯 氮化鎵;寬帶隙半導體; p-n二極管;擊穿;閾值開關;存儲器;

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability

    Fu, KaiFu, HouqiangHuang, XuanqiYang, Tsung-HanChen, HongBaranowski, IzakMontes, JossueYang, ChenZhou, JinganZhao, Yuji

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 Energy-Efficient Indirectly Heated Phase Change RF Switch 包量

    機器翻譯節能的間接加熱相變射頻開關

    作者:Yalon, EilamDatye, Isha M.Moon, Jeong-SunSon, Kyung-AhLee, KangmuPop, Eric 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:Linear radio-frequency (RF) switches are highlydesiredinwireless system front ends. Here, we report electro-thermal measurements and modeling of an indirectly heated phase change RF switch (IPCS). We study the energy-efficiency of the IPCS device by electro-thermal modeling and show that its layer design is crucial to reduce its switching power. Thermally optimized SbTe-based IPCS devices switch at a record-low power of similar to 8 mW/mu m(2), approaching the efficiency limit of such indirectly heated devices.

    【關鍵字】:Phase-changeRF switchthermometrypower handlingenergy-efficiencySbTe

    機器翻譯 相變;射頻開關;測溫;功率處理;能效; sbTe;

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • Energy-Efficient Indirectly Heated Phase Change RF Switch

    Yalon, EilamDatye, Isha M.Moon, Jeong-SunSon, Kyung-AhLee, KangmuPop, Eric

    IEEE Electron Device Letters

    2019年第3期

  • 【24hr】 Mobility and Sheet Charge in High-Electron Mobility Transistor Quantum Wells From Photon-Induced Transconductance 包量

    機器翻譯光子誘導跨導的高電子遷移率晶體管阱中的遷移率和薄片電荷

    作者:Turkulets, YuryShalish, Ilan 期刊:IEEE Electron Device Letters 2019年第3期

    【摘要】:When a high-electron mobility transistor is illuminated, the absorbed photons excite electron-hole pairs. The generated pairs are separated by the built-in field in such a way that the electrons end up in the quantum well generating a photocurrent, while together with the holes that are swept toward the gate, they generate a surface photovoltage. Here, we define the photon-induced transconductance as the ratio between the surface photovoltage and the 2-dimensional electron gas (2DEG) photocurrent under identical illumination conditions. We show that this ratio directly yields the channel mobility and the 2DEG sheet charge density. The photocurrent and photovoltage may vary with the wavelength of the exciting photons. We examine and analyze the optical spectra of this photon-induced transconductance obtained from an AlGaN/GaN heterostructure for a range of photon energies showing that the mobility is obtained only for excitation at photon energies above the wide bandgap energy. The method offers an optical alternative to Hall effect and to field-effect mobility. Unlike Hall effect, it may be measured in the transistor itself. The only alternative that can measure mobility in the transistor itself measures field-effect mobility, while the proposed method measures the same conductivity mobility as measured by Hall effect.

    【關鍵字】:Electron mobilitysheet charge density2D electron gashigh electron mobility transistor

    機器翻譯 電子遷移率;片電荷密度; 2D電子氣;高電子遷移率晶體管;

    由于春節放假,此文獻需2020年2月1日后發送 原文傳遞 原文傳遞并翻譯 加入購物車 收藏
  • Mobility and Sheet Charge in High-Electron Mobility Transistor Quantum Wells From Photon-Induced Transconductance

    Turkulets, YuryShalish, Ilan

    IEEE Electron Device Letters

    2019年第3期

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